IMPURITY CONDUCTION IN SILICON AND EFFECT OF UNIAXIAL COMPRESSION ON P-TYPE SI

被引：39

作者：

CHROBOCZEK, JA

POLLAK, FH

STAUNTON, HF

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,F-38042 GRENOBLE,FRANCE

[2] INT CTR THEORET PHYS,I-34100 TRIESTE,ITALY

[3] CUNY BROOKLYN COLL,BROOKLYN,NY 11210

[4] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 50卷 / 01期

关键词：

D O I：

10.1080/13642818408238831

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：113 / 156

页数：44

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