PASSIVATION OF PINNED N-GAAS SURFACES BY A PLASMA-POLYMERIZED THIN-FILM

被引：22

作者：

RAO, VJ ^{[1
]}

MANORAMA, V ^{[1
]}

BHORASKAR, SV ^{[1
]}

机构：

[1] UNIV POONA,DEPT PHYS,POONA 411007,MAHARASHTRA,INDIA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期

关键词：

D O I：

10.1063/1.101268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1799 / 1801

页数：3

共 22 条

[1]

AZAWA T, 1985, DEC IEEE, P328

[2] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J].

HASEGAWA, H ;

SAWADA, T .

THIN SOLID FILMS, 1983, 103 (1-2) :119-140

[3] QUANTITATIVE COMPARISON OF FERMI LEVEL PINNING AT GAAS/METAL AND GAAS/LIQUID JUNCTIONS [J].

HOROWITZ, G ;

ALLONGUE, P ;

CACHET, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) :2563-2569

[4]

KAZIOR TE, 1983, J APPL PHYS, V54, P253

[5]

LIU D, 15TH INT S GAAS REL

[6] MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION [J].

MASSIES, J ;

CHAPLART, J ;

LAVIRON, M ;

LINH, NT .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :693-695

[7] INVESTIGATION OF KILOVOLT ELECTRON-ENERGY DISSIPATION IN SOLIDS [J].

MATSUKAWA, T ;

SHIMIZU, R ;

HARADA, K ;

KATO, T .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :733-740

[8] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE [J].

MEINERS, LG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1402-1407

[9] REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT [J].

NELSON, RJ ;

WILLIAMS, JS ;

LEAMY, HJ ;

MILLER, B ;

CASEY, HC ;

PARKINSON, BA ;

HELLER, A .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :76-79

[10] NEAR-IDEAL TRANSPORT IN AN ALGAAS GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY NA2S.9H2O REGROWTH [J].

NOTTENBURG, RN ;

SANDROFF, CJ ;

HUMPHREY, DA ;

HOLLENBECK, TH ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :218-220

← 1 2 3 →