DIFFUSION OF HF IN ALPHA-ZR

被引：9

作者：

DYMENT, F ^{[1
]}

BEHAR, M ^{[1
]}

DHERS, H ^{[1
]}

GRANDE, PL ^{[1
]}

SAVINO, E ^{[1
]}

ZAWISLAK, FC ^{[1
]}

机构：

[1] UNIV FED RIO GRANDE SUL,INST FIS,BR-91500 PORTO ALEGRE,BRAZIL

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 51卷 / 01期

关键词：

66.10.CB; 66.30.h; 66.30.JT;

D O I：

10.1007/BF00324462

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diffusion of Hf in α-Zr has been studied in the temperature range 773-1115 K for the first time using the Rutherford backscattering technique. For this purpose we have used 250 Å thick Hf films, which were deposited on two types of Zr samples. Our results show that in both cases, the diffusion coefficients follow curved Arrhenius plots. For the pure Zr material the diffusion coefficients are systematically lower than for Zr samples of lower purity. These results indicate that the Hf diffusion mechanism is at least partially of extrinsic character. Finally it should be mentioned that the present data lie significatively below the values of self-diffusion in α-Zr. © 1990 Springer-Verlag.

引用

页码：29 / 33

页数：5