SEGREGATION AND IMPURITY EFFECTS IN SILICON GROWN FROM THE MELT IN THE PRESENCE OF 2ND PHASE FORMATION

被引：10

作者：

KALEJS, JP

BATHEY, B

DUBE, C

机构：

[1] Mobil Solar Energy Corporation, Billerica, MA 01821

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 109卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90175-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Transient segregation with second phase formation is studied for silicon sheet crystals grown from melts deliberately doped with iron and with chromium. Normal transients are modified by the second phase already after a few cm into growth. Second phases of iron and chromium appear in the form of spherical particles, sheet-like lamellae and filaments. Experimental data on the transient behavior and morphology of the second phases are related to segregation with eutectic phase formation.

引用

页码：174 / 180

页数：7

共 15 条

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[2]

BATHEY BR, 1989, 4TH INT PHOT SCI ENG, P117

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