TRAPPING OF DEUTERIUM IN KRYPTON-IMPLANTED NICKEL

被引：11

作者：

FRANK, RC ^{[1
]}

MCMANUS, SP ^{[1
]}

REHN, LE ^{[1
]}

BALDO, P ^{[1
]}

机构：

[1] ARGONNE NATL LAB,DIV MAT SCI & TECHNOL,ARGONNE,IL 60439

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2747 / 2751

页数：5

共 21 条

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[3] HYDROGEN TRAPPING IN ION-IMPLANTED NICKEL [J].

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MYERS, SM .

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[5] DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN NICKEL [J].

BESENBACHER, F ;

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MYERS, SM .

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[6] INTERACTION OF HYDROGEN WITH DEFECTS IN METALS [J].

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[7]

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[8] PERMEATION OF IMPLANTED DEUTERIUM THROUGH NI NEAR ROOM-TEMPERATURE [J].

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MOLLER, W .

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[9] EFFECT OF TRAPPING ON HYDROGEN PERMEATION [J].

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PILLINGER, WL .

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[10] CALCULATIONS OF THE BINDING OF HYDROGEN TO FIXED INTERSTITIAL IMPURITIES IN NICKEL [J].

DAW, MS ;

BISSON, CL ;

WILSON, WD .

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