EVIDENCE FOR THERMALLY GENERATED DEFECTS IN LIQUID AND GLASSY AS2SE3

被引：15

作者：

THIO, T

MONROE, D

KASTNER, MA

机构：

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.52.667

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：667 / 670

页数：4

共 14 条

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[7] DEFECT CHEMISTRY AND STATES IN THE GAP OF LONE-PAIR SEMICONDUCTORS [J].

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[8] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J].

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[10] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J].

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KASTNER, M .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1421-1424

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