PHOTOSENSITIVE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AIGAAS/GAAS HETEROSTRUCTURES

被引：11

作者：

QIAN, QD

MELLOCH, MR

COOPER, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：638 / 640

页数：3

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