CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF A METAL/AL0.5GA0.5AS/GAAS CAPACITOR

被引：6

作者：

DRUMMOND, TJ

FISCHER, R

ARNOLD, D

MORKOC, H

SHUR, MS

机构：

[1] UNIV ILLINOIS,DEPT COORDINATED SCI,URBANA,IL 61801

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.94714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：214 / 216

页数：3

共 17 条

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[4] DRUMMOND TJ, 1982, ELECTRON LETT, V18, P794
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[6] HICKMOTT TW, UNPUB
[7] DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (AL,GA)AS/GAAS FETS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 186 - 189
[8] TUNNELING IN THIN MOS STRUCTURES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 996 - 1003
[9] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319
[10] SCHOTTKY-BARRIER HEIGHTS OF MOLECULAR-BEAM EPITAXIAL METAL-ALGAAS STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 636 - 638

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