ELECTRICAL-PROPERTIES OF A-GAAS/C-SI(P) HETEROJUNCTIONS

被引：27

作者：

AGUIR, K

FENNOUH, A

CARCHANO, H

SEGUIN, JL

ELHADADI, B

LALANDE, F

机构：

[1] Electronique et Physico-chimie des Couches Minces, Université d'Aix-Marseille III, Faculté des Sciences et Techniques de St-Jérǒme, 13397 Marseille Cedex 20

来源：

THIN SOLID FILMS | 1995年 / 257卷 / 01期

关键词：

AMORPHOUS MATERIALS; ELECTRICAL PROPERTIES AND MEASUREMENTS; GALLIUM ARSENIDE; HETEROSTRUCTURES;

D O I：

10.1016/0040-6090(94)06323-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterojunctions have been fabricated by deposition of amorphous gallium arsenide on p-type crystalline silicon. C(V) and J(V) measurements were performed to determine electrical properties of these structures. Rectifying properties have been obtained, and capacitance-voltage behavior indicates an abrupt interface with a main discontinuity in the valence bands. The forward current involves tunneling and is successfully explained by a multi-tunneling capture-emission model. The reverse current is probably limited by the generation process.

引用

页码：98 / 103

页数：6

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