GRAIN-BOUNDARY EFFECTS ON THE THERMOELECTRIC-POWER OF SEMICONDUCTING-FILMS

被引：5

作者：

BHATTACHARYYA, D

DUTTA, J

CHAUDHURI, S

PAL, AK

机构：

[1] Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta

来源：

MATERIALS LETTERS | 1993年 / 16卷 / 04期

关键词：

D O I：

10.1016/0167-577X(93)90167-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical formulation of grain boundary effects on the thermoelectric power of semiconducting films is presented. The theory has been applied to explain the data for CdSxTe1-x films.

引用

页码：218 / 221

页数：4

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