GE K-EDGE EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF THE LOCAL-STRUCTURE OF AMORPHOUS GETE AND THE CRYSTALLIZATION

被引:51
作者
MAEDA, Y
WAKAGI, M
机构
[1] Hitachi Research Laboratory, Hitachi Ltd, Hitachi, Ibaraki, 319-12
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 01期
关键词
EXAFS; CRYSTALLIZATION; GETE; AMORPHOUS;
D O I
10.1143/JJAP.30.101
中图分类号
O59 [应用物理学];
学科分类号
摘要
The local structure and crystallization of amorphous GeTe (a-GeTe) were examined by means of Ge K-edge EXAFS. In a-GeTe, both Be-Be and Be-Te bonds were observed to exist in nearest neighbors of Ge. The average coordination number around Ge is 3.7, which is close to the tetrahedral structure. A random covalent network (rcn) model seems to be suitable for the local Structure. After a-GeTe crystallized at 129-degrees-C, the Ge-Ge bond disappears and the Ge-Te bond length increases considerable. As temperature rises, in a-Ge-Te the Debye-Waller factor of the GE-Te bond increases greatly, while that of the Ge-Ge bond increases only slightly. At the crystallization, it is found that the fluctuation of the Ge-Te bond length plays a major role in the change of the local structure and bonding state around Ge.
引用
收藏
页码:101 / 106
页数:6
相关论文
共 18 条
[1]   AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .3. ELECTRICAL PROPERTIES AND BAND STRUCTURE [J].
BAHL, SK ;
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2196-&
[2]  
Betts F., 1970, Journal of Non-Crystalline Solids, V4, P554, DOI 10.1016/0022-3093(70)90093-1
[3]   COMPOUND MATERIALS FOR REVERSIBLE, PHASE-CHANGE OPTICAL-DATA STORAGE [J].
CHEN, M ;
RUBIN, KA ;
BARTON, RW .
APPLIED PHYSICS LETTERS, 1986, 49 (09) :502-504
[4]   AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .I. GROWTH AND STRUCTURAL BEHAVIOR [J].
CHOPRA, KL ;
BAHL, SK .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4171-&
[5]   CORE ABSORPTION-SPECTRA OF CRYSTALLINE AND AMORPHOUS GETE THIN-FILMS [J].
FUKUI, K ;
SAITO, T ;
KONDO, S ;
FUJII, Y ;
SAKISAKA, Y ;
WATANABE, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1990, 59 (11) :4161-4168
[6]  
HARRISON WA, 1980, ELECTRONIC STRUCTURE, pCH3
[7]   LASER-INDUCED CRYSTALLIZATION OF AMORPHOUS GETE - A TIME-RESOLVED STUDY [J].
HUBER, E ;
MARINERO, EE .
PHYSICAL REVIEW B, 1987, 36 (03) :1595-1604
[8]   NEW METHOD FOR CALCULATION OF ATOMIC PHASE-SHIFTS - APPLICATION TO EXTENDED X-RAY ABSORPTION FINE-STRUCTURE (EXAFS) IN MOLECULES AND CRYSTALS [J].
LEE, PA ;
BENI, G .
PHYSICAL REVIEW B, 1977, 15 (06) :2862-2883
[9]   EXTENDED X-RAY ABSORPTION FINE-STRUCTURE ANALYSIS OF INTER-ATOMIC DISTANCES, COORDINATION NUMBERS, AND MEAN RELATIVE DISPLACEMENTS IN DISORDERED ALLOYS [J].
LENGELER, B ;
EISENBERGER, P .
PHYSICAL REVIEW B, 1980, 21 (10) :4507-4520
[10]  
MACGILLAVRY CH, 1972, INT TABLES XRAY CRYS, V3, P161