DETERMINATION OF THE INTERFACE CHARGE BETWEEN AN EPILAYER AND A SUBSTRATE USING CAPACITANCE-VOLTAGE MEASUREMENTS

被引：18

作者：

GOREN, D

AMIR, N

NEMIROVSKY, Y

机构：

[1] Kidron Microelectronics Research Center, Department of Electrical Engineering, Technion-Israel Institute of Technology

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 01期

关键词：

D O I：

10.1063/1.350709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method is presented for the measurement of the interface charge between an epitaxial layer and a substrate. Capacitance-voltage characteristics of Schottky contacts formed on the epilayer are measured and analyzed. The interface charge is determined by the modified built-in potential and capacitance. Experimental results are reported for p-type CdTe epilayers grown by metalorganic chemical vapor deposition on a p-type CdTe substrate using indium contacts.

引用

页码：318 / 325

页数：8

共 7 条

[1]

AMIR N, 1990, J ELECTRON MATER, V20, P227

[2] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

KENNEDY, DP ;

MURLEY, PC ;

KLEINFELDER, W .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) :399-+

[3] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297

[4]

Kroemer H., 1985, VLSI ELECTRONICS MIC, V10, P121

[5] A MODEL FOR THE GROWTH OF CDTE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

NEMIROVSKY, Y ;

GOREN, D ;

RUZIN, A .

JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (08) :609-613

[6]

PIERRET RF, 1983, SEMICONDUCTOR FUNDAM, V1

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH5

← 1 →