A MODEL FOR THE GROWTH OF CDTE BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

A kinetic model for the metalorganic chemical vapor deposition (MOCVD) growth of CdTe over a wide temperature range is presented. The model yields the growth rate as a function of the gas-phase concentrations of the constituents. The model is corroborated with experimental results obtained by the MOCVD growth of CdTe at 380-degrees-C. The major features of the model are the observed two-step surface-controlled pyrolysis and surface saturation, leading initially to a growth rate that increases with the square root of the concentrations of the reacting species and subsequently to a decrease of the growth rate as the concentrations increase. At even higher concentrations, an additional increase of growth rate is observed and modeled.