ON THE MECHANISM OF GROWTH OF CDTE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：41

作者：

BHAT, IB

TASKAR, NR

GHANDHI, SK

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1149/1.2100404

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：195 / 198

页数：4

共 19 条

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[6] METALORGANIC VAPOR-DEPOSITION OF CDTE AND HGCDTE EPITAXIAL-FILMS ON INSB AND GAAS SUBSTRATES [J].

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