EFFECT OF HEAT-TREATMENT ON TRANSISTOR LOW CURRENT GAIN WITH VARIOUS AMBIENTS AND CONTAMINATION

被引：11

作者：

BERGH, AA

BARTHOLOMEW, CY

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 12期

关键词：

D O I：

10.1149/1.2410972

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1282 / +

页数：1

共 26 条

[1]

BALK P, 1965, MAY SAN FRANC M SOC

[2]

BLUM J, 1964, MAY TOR M SOC

[3]

BUSEN KM, 1965, T METALL SOC AIME, V233, P536

[4] RECOMBINATION STATISTICS FOR AUGER EFFECTS WITH APPLICATIONS TO P-N JUNCTIONS [J].

EVANS, DA ;

LANDSBERG, PT .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :169-181

[5] HIGH-GAIN MICROPOWER TRANSISTORS [J].

GIULIANO, MN ;

GOINS, EW ;

MCLOUSKI, RM ;

LEINKRAM, CZ .

PROCEEDINGS OF THE IEEE, 1964, 52 (06) :712-+

[6]

HETHERINGTON G, 1965, PHYS CHEM GLASSES, V6, P6

[7]

IWERSEN JE, 1962, T IRE, VED9, P474

[8] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].

KINGSTON, RH ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720

[9]

KOOI E, 1966, T IEEE, VED13, P238

[10] DIFFUSION OF HYDROGEN AND DEUTERIUM IN FUSED QUARTZ [J].

LEE, RW ;

FRANK, RC ;

SWETS, DE .

JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (04) :1062-&

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