INTERMIXING OF AN ALAS-GAAS SUPER-LATTICE BY ZN DIFFUSION

[1] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +

[2] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 357 - 363

[3] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477

[4] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344

[5] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[6] COMPLEXES DUE TO DONOR-ACCEPTOR-TYPE TRANSITIONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4842 - 4846

[7] PRECIPITATE-LIKE ZONES IN AS-GROWN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3689 - 3689

[8] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429

[9] SIMPLE THEORETICAL ESTIMATES OF SCHOTTKY CONSTANTS AND VIRTUAL-ENTHALPIES OF SINGLE VACANCY FORMATION IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 419 - 422

[10] NONSTOICHIOMETRY AND NONRADIATIVE RECOMBINATION IN GAP [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1159 - 1169

[1] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1967, 162 (03): : 660 - +

[2] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 357 - 363

[3] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477

[4] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344

[5] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[6] COMPLEXES DUE TO DONOR-ACCEPTOR-TYPE TRANSITIONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4842 - 4846

[7] PRECIPITATE-LIKE ZONES IN AS-GROWN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3689 - 3689

[8] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429

[9] SIMPLE THEORETICAL ESTIMATES OF SCHOTTKY CONSTANTS AND VIRTUAL-ENTHALPIES OF SINGLE VACANCY FORMATION IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 419 - 422

[10] NONSTOICHIOMETRY AND NONRADIATIVE RECOMBINATION IN GAP [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1159 - 1169