PREPARATION AND PROPERTIES OF PBS CRYSTALS WITH LOW CARRIER CONCENTRATIONS

被引：14

作者：

HARMAN, TC ^{[1
]}

STRAUSS, AJ ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 06期

关键词：

D O I：

10.1007/BF02654346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：621 / 644

页数：24

共 20 条

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[5]

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[6] PBS PHOTODIODES FABRICATED BY SB+ION IMPLANTATION [J].

DONNELLY, JP ;

HARMAN, TC ;

FOYT, AG ;

LINDLEY, WT .

SOLID-STATE ELECTRONICS, 1973, 16 (04) :529-534

[7] HORIZONTAL UNSEEDED VAPOR GROWTH OF IV-VI COMPOUNDS AND ALLOYS [J].

HARMAN, TC ;

MCVITTIE, JP .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) :843-854

[8]

HARMAN TC, 1967, THERMOELECTRIC THERM, P196

[9]

HARMAN TC, 1974, APPLIED SOLID STATE, V4, P3

[10]

HONIG RE, 1969, RCA REV, V30, P285

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