GW-APPROXIMATION ENERGIES AND HARTREE-FOCK BANDS OF SEMICONDUCTORS

被引：59

作者：

HOTT, R ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.44.1057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GW-approximation calculations have been performed for diamond, silicon, germanium, gallium arsenide, and indium phosphide using refined numerical techniques. We obtained good but not perfect agreement of the GW-approximation energies with experiment. Exchange- and correlation-energy contributions and the Hartree-Fock bands of these substances have also been calculated.

引用

页码：1057 / 1065

页数：9

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