POSTGROWTH ANNEALING TREATMENTS OF EPITAXIAL CAF2 ON SI(100)

被引：20

作者：

PHILLIPS, JM

PFEIFFER, L

JOY, DC

SMITH, TP

GIBSON, JM

AUGUSTYNIAK, WM

WEST, KW

机构：

来源：

关键词：

D O I：

10.1149/1.2108529

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：224 / 227

页数：4

共 5 条

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ISHIWARA, H
ASANO, T
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68
[2] PEOPLE R, 1985, MATER RES SOC S P, V37, P168
[3] USE OF A RAPID ANNEAL TO IMPROVE CAF2-SI (100) EPITAXY
PFEIFFER, L
PHILLIPS, JM
SMITH, TP
AUGUSTYNIAK, WM
WEST, KW
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 947 - 949
[4] PHILLIPS JM, 1985, MATER RES SOC S P, V37, P143
[5] EPITAXIAL-GROWTH AND CHARACTERIZATION OF CAF2 ON SI
SCHOWALTER, LJ
FATHAUER, RW
GOEHNER, RP
TURNER, LG
DEBLOIS, RW
HASHIMOTO, S
PENG, JL
GIBSON, WM
KRUSIUS, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 302 - 308