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A NOVEL STRUCTURE OF PRESSURE SENSORS

被引：24
作者：
WANG, YL
ZHENG, XY
LIU, LT
LI, ZJ
机构：
[1] Institute of Microelectronics, Tsinghua University, Beijing, 100084, P. R
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 08期
关键词：
D O I：
10.1109/16.119017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel structure for discrete and integrated pressure sensors is proposed and realized. A piezoresistive bridge pressure sensor and a pressure-sensitive MOS oscillator on this structure were fabricated and tested. The fully MOS-compatible technology, high-grade performance, intrinsically low-temperature coefficient, and feasibility of fabrication are described to show the advantages of the new structure for production of discrete and, in particular, integrated pressure sensors as well as large-area sensor arrays.
引用
收藏
页码：1797 / 1802
页数：6
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