FINITE-ELEMENT CALCULATION OF THE INFLUENCE OF INTERDIFFUSION ON EIGENSTATES IN A GAAS/ALXGA1-XAS SINGLE-QUANTUM-WELL STRUCTURE

被引：5

作者：

ZHAO, AP ^{[1
]}

CVETKOVIC, SR ^{[1
]}

YANG, ZY ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1993年 / 25卷 / 11期

关键词：

D O I：

10.1007/BF00430190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of interdiffusion on eigenstates in an interdiffusion-induced GaAs/AlxGa1-xAs single-quantum-well structure is analysed numerically by the finite element method. In this approach, the confinement potential profile of the interdiffused quantum well structure is nonlinear and is modelled by an error function and, in particular, the nature of the effective mass of an electron is considered. The results show that the number of eigenstates and energy levels varies with the extent of the interdiffusion. Numerical results for the quasi-bound states in the quantum well structure with an applied electric field are also presented.

引用

页码：845 / 851

页数：7

共 18 条

[1] CALCULATION OF TRANSMISSION TUNNELING CURRENT ACROSS ARBITRARY POTENTIAL BARRIERS [J].

ANDO, Y ;

ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1497-1502

[2] OPTICAL-PROPERTIES OF ALXGA1-XAS [J].

ASPNES, DE ;

KELSO, SM ;

LOGAN, RA ;

BHAT, R .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767

[3] HIGH-POWER 1.5-MU-M ALL-MOVPE BURIED HETEROSTRUCTURE GRADED INDEX SEPARATE CONFINEMENT MULTIPLE QUANTUM WELL LASERS [J].

COOPER, DM ;

SELTZER, CP ;

AYLETT, M ;

ELTON, DJ ;

HARLOW, M ;

WICKES, H ;

MURRELL, DL .

ELECTRONICS LETTERS, 1989, 25 (24) :1635-1637

[4] MEAN LIFETIME CALCULATIONS OF QUANTUM-WELL STRUCTURES - A RIGOROUS ANALYSIS [J].

GHATAK, AK ;

GOYAL, IC ;

GALLAWA, RL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (02) :305-310

[5]

GHATAK AK, 1988, IEEE J QUANTUM ELECT, V24, P1542

[6] CALCULATED QUASI-EIGENSTATES AND QUASI-EIGENENERGIES OF QUANTUM-WELL SUPERLATTICES IN AN APPLIED ELECTRIC-FIELD [J].

HARWIT, A ;

HARRIS, JS ;

KAPITULNIK, A .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3211-3213

[7] EIGENSTATE CALCULATION OF QUANTUM WELL STRUCTURES USING FINITE-ELEMENTS [J].

HAYATA, K ;

KOSHIBA, M ;

NAKAMURA, K ;

SHIMIZU, A .

ELECTRONICS LETTERS, 1988, 24 (10) :614-616

[8] ALUMINUM ION-IMPLANTATION ENHANCED INTERMIXING OF GAAS-ALGAAS QUANTUM-WELL STRUCTURES [J].

KASH, K ;

TELL, B ;

GRABBE, P ;

DOBISZ, EA ;

CRAIGHEAD, HG ;

TAMARGO, MC .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) :190-194

[9] EXACT SOLUTION OF THE SCHRODINGER-EQUATION ACROSS AN ARBITRARY ONE-DIMENSIONAL PIECEWISE-LINEAR POTENTIAL BARRIER [J].

LUI, WW ;

FUKUMA, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1555-1559

[10] FINITE-ELEMENT ANALYSIS OF QUANTUM WELLS OF ARBITRARY SEMICONDUCTORS WITH ARBITRARY POTENTIAL PROFILES [J].

NAKAMURA, K ;

SHIMIZU, A ;

KOSHIBA, M ;

HAYATA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (05) :889-895

← 1 2 →