EIGENSTATE CALCULATION OF QUANTUM WELL STRUCTURES USING FINITE-ELEMENTS

被引：17

作者：

HAYATA, K ^{[1
]}

KOSHIBA, M ^{[1
]}

NAKAMURA, K ^{[1
]}

SHIMIZU, A ^{[1
]}

机构：

[1] CANON INC,RES CTR,ATSUGI 24301,JAPAN

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 10期

关键词：

MATHEMATICAL TECHNIQUES - Finite Element Method - SEMICONDUCTOR MATERIALS - Analysis;

D O I：

10.1049/el:19880416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The finite-element technique based on a Galerkin method is applied to the eigenstate problem of semiconductor quantum wells with arbitrary potential profiles. In the present formulation, finite elements are employed only within the well region, and the contribution of the semi-infinite barrier region is evaluated analytically. Self-consistent solutions are obtainable by solving a matrix eigenvalue problem iteratively.

引用

页码：614 / 616

页数：3

共 4 条

[1] VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD [J].

BASTARD, G ;

MENDEZ, EE ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW B, 1983, 28 (06) :3241-3245

[2] A BIRDS-EYE-VIEW ON THE EVOLUTION OF SEMICONDUCTOR SUPERLATTICES AND QUANTUM-WELLS [J].

ESAKI, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1611-1624

[3]

Hayata K., 1985, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part A, VJ68A, P115

[4]

Miyoshi T., 1987, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE70, P297

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