BULK AND SURFACE 2ND-HARMONIC GENERATION IN NONCENTROSYMMETRIC SEMICONDUCTORS

被引：13

作者：

HOLLERING, RWJ

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

OPTICS COMMUNICATIONS | 1992年 / 90卷 / 1-3期

关键词：

D O I：

10.1016/0030-4018(92)90347-T

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The use of optical second-harmonic generation as a surface probe for noncentrosymmetric media is demonstrated. By exploiting the difference in bulk and surface symmetry of a GaAs(001) crystal, separate determination of bulk and surface nonlinear optics responses is possible if suitable polarization directions are selected and sub-bandgap excitation is used. The detection scheme makes use of the interference between bulk and surface SH electric fields, and provides both amplitude and phase information.

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页码：147 / 150

页数：4

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