OPTICAL 2ND HARMONIC-GENERATION AS AN INSITU SURFACE DIAGNOSTIC PROBE OF SEMICONDUCTOR GROWTH-PROCESSES .1. ADSORPTION OF TRIETHYLGALLIUM ON GAAS (100) AT 300-K

被引：15

作者：

BUHAENKO, DS

FRANCIS, SM

GOULDING, PA

PEMBLE, ME

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(89)90559-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：595 / 598

页数：4

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