THE INTERACTION OF H-2 WITH GAAS (100) SURFACES - A MODEL STUDY OF MOVPE SUBSTRATE PREPARATION

被引：16

作者：

BUHAENKO, DS

FRANCIS, SM

GOULDING, PA

PEMBLE, ME

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(89)90558-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：591 / 594

页数：4

共 15 条

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[8] Moss S.J., 1987, CHEM SEMICONDUCTOR I
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