SIMULATION-ORIENTED NOISE MODEL FOR MOS DEVICES

被引：14

作者：

NICOLLINI, G

PANCINI, D

PERNICI, S

机构：

[1] SGS Microelettronica, Milan, Italy, SGS Microelettronica, Milan, Italy

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 06期

关键词：

NOISE; SPURIOUS SIGNAL - Mathematical Models;

D O I：

10.1109/JSSC.1987.1052878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A formula for the noise in MOS devices particularly suited to general-purpose circuit simulation programs is described. It is valid in every part of the MOS I-V curves. The expression for the thermal noise is derived from a theoretical analysis, and the flicker-noise expression is empiric.

引用

页码：1209 / 1212

页数：4

共 8 条

[1]

Allen P., 1984, SWITCHED CAPACITORS

[2] LOW-FREQUENCY NOISE CONSIDERATIONS FOR MOS AMPLIFIERS DESIGN [J].