DYNAMIC-RANGE OPTIMIZATION IN SIMS ANALYSES OF ARSENIC AND ANTIMONY DOPANTS IN SILICON

被引：6

作者：

WANGEMANN, K ^{[1
]}

LANGEGIESELER, R ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY

来源：

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1991年 / 341卷 / 1-2期

关键词：

D O I：

10.1007/BF00322105

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The application of two sample preparation techniques leads to a better understanding of the profile tailing in SIMS analyses of As and Sb distributions measured with Cs primary ions. The dynamic range in the SIMS depth profiles in terms of the detected concentration range is improved nearly by three orders of magnitude on samples with extremely high surface concentrations compared to measurements without preparation. More than five orders of magnitude are obtained. The application of the preparation techniques to As ion implants in silicon reveals a channeling tail below a concentration level of 5.10(16) at/cm3 which is nearly independent of the implanted ion dose if it exceeds 5.10(12) at/cm2.

引用

页码：49 / 53

页数：5

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