ANALYSIS OF POLYCRYSTALLINE SILICON DIFFUSION SOURCES BY SECONDARY ION MASS-SPECTROMETRY

被引：55

作者：

SCHABER, H

VONCRIEGERN, R

WEITZEL, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4036 / 4042

页数：7

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