ANALYSIS OF POLYCRYSTALLINE SILICON DIFFUSION SOURCES BY SECONDARY ION MASS-SPECTROMETRY

被引:55
作者
SCHABER, H
VONCRIEGERN, R
WEITZEL, I
机构
关键词
D O I
10.1063/1.335582
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4036 / 4042
页数:7
相关论文
共 23 条
  • [21] ARSENIC IMPLANTATION INTO POLYCRYSTALLINE SILICON AND DIFFUSION TO SILICON SUBSTRATE
    TSUKAMOTO, K
    AKASAKA, Y
    HORIE, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1815 - 1821
  • [22] WERNER HW, 1979, MIKROCHIM ACTA S, V8, P25
  • [23] THE POLY-SINGLE CRYSTALLINE SILICON INTERFACE
    WONG, CY
    MICHEL, AE
    ISAAC, RD
    KASTL, RH
    MADER, SR
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1131 - 1134