GENERALIZED-MODEL FOR THE CLUSTERING OF AS DOPANTS IN SI

[1] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 490 - 500

[2] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[3] FAIR RB, 1977, SEMICONDUCTOR SILICO, P968

[4] GRASSERBAUER M, 1981, 3 SIMS P BUD C HUNG

[5] HU SM, 1973, ATOMIC DIFFUSION SEM, P306

[6] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 532 - 534

[7] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 765 - 768

[8] METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 114 - 116

[9] SCHROEN WH, 1977, NATO ADV STUDY I E

[10] ARSENIC CLUSTERING IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3195 - +

[1] MODELS FOR COMPUTER-SIMULATION OF COMPLETE IC FABRICATION PROCESS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 490 - 500

[2] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 273 - 279

[3] FAIR RB, 1977, SEMICONDUCTOR SILICO, P968

[4] GRASSERBAUER M, 1981, 3 SIMS P BUD C HUNG

[5] HU SM, 1973, ATOMIC DIFFUSION SEM, P306

[6] SOLID SOLUBILITY OF AS IN SI AS DETERMINED BY ION-IMPLANTATION AND CW LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 532 - 534

[7] THE SOLID SOLUBILITY AND THERMAL-BEHAVIOR OF METASTABLE CONCENTRATIONS OF AS IN SI [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 765 - 768

[8] METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 114 - 116

[9] SCHROEN WH, 1977, NATO ADV STUDY I E

[10] ARSENIC CLUSTERING IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3195 - +