HIGHLY RELIABLE SIO2/SI3N4 STACKED DIELECTRIC ON RAPID-THERMAL-NITRIDED RUGGED POLYSILICON FOR HIGH-DENSITY DRAM

被引：18

作者：

LO, GQ ^{[1
]}

KWONG, DL ^{[1
]}

MATHEWS, VK ^{[1
]}

FAZAN, PC ^{[1
]}

机构：

[1] MICRON TECHNOL INC,BOISE,ID 83706

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 07期

关键词：

D O I：

10.1109/55.192759

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates that by using rapid thermal nitridation (RTN) of rugged poly-Si surface prior to Si3N4 deposition, the quality and reliability of reoxidized Si3N4 dielectric (ON) (t(ox,eff) approximately 35 angstrom) can be significantly improved over ON films on rugged poly-Si without RTN treatment. These improvements include significantly reduced defect-related dielectric breakdown, 10(3) X increase in TDDB lifetime, lower leakage current, and suppressed electron / hole trapping and capacitance loss during stress.

引用

页码：372 / 374

页数：3

共 16 条

[1]

AIJKA N, 1991, VLSI TECH S, P63

[2] ULTRATHIN SILICON-NITRIDE FILMS PREPARED BY COMBINING RAPID THERMAL NITRIDATION WITH LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].