ELIMINATION OF RANDOM COMPOSITIONAL INHOMOGENEITIES IN CZOCHRALSKI GROWN SILICON

被引：8

作者：

MURGAI, A ^{[1
]}

WITT, AF ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134443

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1276 / 1277

页数：2

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