A STUDY OF DEFECTS IN AMORPHOUS-SILICON FILMS

被引：52

作者：

DANNEFAER, S ^{[1
]}

KERR, D ^{[1
]}

HOGG, BG ^{[1
]}

机构：

[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS C,DENMARK

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：155 / 160

页数：6

共 19 条

[1] POSITRON DYNAMICS IN SOLIDS
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[J]. APPLIED PHYSICS, 1974, 5 (01): : 1 - 23
[2] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
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[3] STRUCTURAL INVESTIGATION OF COLD-ROLLED METALLIC GLASSES USING POSITRON-ANNIHILATION METHODS
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[J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 316 - 317
[4] INVESTIGATION OF ELECTRONIC-STRUCTURE OF A GLASSY PD0.775CU0.06SI0.165 ALLOY BY ANGULAR-CORRELATION STUDIES OF POSITRON-ANNIHILATION RADIATION
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[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1975, 5 (09): : 1681 - 1686
[5] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON
DANNEFAER, S
DEAN, GW
KERR, DP
HOGG, BG
[J]. PHYSICAL REVIEW B, 1976, 14 (07): : 2709 - 2714
[6] ON THE EFFECT OF BACKSCATTERING OF GAMMA-QUANTA AND STATISTICS IN POSITRON-ANNIHILATION LIFETIME MEASUREMENTS
DANNEFAER, S
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (04): : 255 - 259
[7] SIMPLE APPROACH TO ANALYSIS OF POSITRON LIFETIME SPECTRA
DANNEFAER, S
[J]. PHYSICS LETTERS A, 1977, 62 (06) : 436 - 438
[8] A SYSTEMATIC STUDY OF POSITRON LIFETIMES IN SEMICONDUCTORS
DANNEFAER, S
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (03): : 599 - 605
[9] BONDING OF FLUORINE IN AMORPHOUS HYDROGENATED SILICON
FANG, CJ
LEY, L
SHANKS, HR
GRUNTZ, KJ
CARDONA, M
[J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6140 - 6148
[10] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS
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HOLZHAUER, U
MANTL, S
RICHTER, FW
STURM, R
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (01): : 69 - 75

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