CHEMICAL TRENDS IN GROUND-STATE AND EXCITED-STATE PROPERTIES OF INTERSTITIAL 3D IMPURITIES IN SILICON

被引：60

作者：

KATAYAMAYOSHIDA, H ^{[1
]}

ZUNGER, A ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.31.8317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8317 / 8320

页数：4

共 14 条

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PHYSICAL REVIEW B, 1981, 23 (10) :5048-5079

[10] ELECTRONIC-STRUCTURE OF TRANSITION-ATOM IMPURITIES IN GAP [J].

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PHYSICAL REVIEW B, 1985, 31 (06) :3729-3759

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