LOCALIZATION AND MAGNETISM OF AN INTERSTITIAL IRON IMPURITY IN SILICON

被引：47

作者：

KATAYAMAYOSHIDA, H

ZUNGER, A

机构：

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.53.1256

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1256 / 1259

页数：4

共 28 条

[1] 3D-]4S BANDS OF TRANSITION-METAL IONS IN LIF AND NAF [J].

CHASE, DB ;

MCCLURE, DS .

JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (01) :74-80

[2] LEVEL POSITIONS OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 25 (08) :4972-4980

[3] THEORY OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1981, 23 (04) :1851-1858

[4] MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 25 (08) :4962-4971

[5] MANY-ELECTRON MULTIPLET EFFECTS IN THE SPECTRA OF 3D IMPURITIES IN HETEROPOLAR SEMICONDUCTORS [J].

FAZZIO, A ;

CALDAS, MJ ;

ZUNGER, A .

PHYSICAL REVIEW B, 1984, 30 (06) :3430-3455

[6] SEPARATION OF ONE-ELECTRON AND MANY-ELECTRON EFFECTS IN THE EXCITATION-SPECTRA OF 3D IMPURITIES IN SEMICONDUCTORS [J].

FAZZIO, A ;

CALDAS, M ;

ZUNGER, A .

PHYSICAL REVIEW B, 1984, 29 (10) :5999-6002

[7] ON THE QUESTION OF MULTIPLE CHARGE STATES OF INTERSTITIAL FE AND CR IN SILICON [J].

FEICHTINGER, H ;

CZAPUTA, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 79 (02) :K143-K146

[8]

FREEMAN AJ, 1980, PHYS REV LETT, V5, P498

[9]

GREULICHWEBER S, UNPUB

[10] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J].

HALDANE, FDM ;

ANDERSON, PW .

PHYSICAL REVIEW B, 1976, 13 (06) :2553-2559

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