ZENER CURRENT CONTRIBUTION TO THE RESISTANCE-AREA PRODUCT OF 8-MU-M TO 14-MU-M HG1-XCDXTE PHOTODIODES

被引：11

作者：

GOPAL, V

DHAR, V

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1489 / 1493

页数：5

共 20 条

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[3]

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Broudy R., 1980, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V217, P69

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PHYSICS LETTERS A, 1982, 89 (03) :151-153

[8] PROPERTIES OF HG IMPLANTED HG1-XCDXTE INFRARED DETECTORS [J].

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SVELTO, F .

APPLIED PHYSICS, 1978, 17 (01) :105-110

[9] P-N-JUNCTION CHARACTERISTICS AND ULTIMATE PERFORMANCES OF HIGH-QUALITY 8-14MUM HG1-XCDXTE IMPLANTED PHOTODETECTORS [J].

FIORITO, G ;

GASPARRINI, G ;

SVELTO, F .

INFRARED PHYSICS, 1977, 17 (01) :25-31

[10] CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE [J].

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SCHMIT, JL .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1639-1640

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