NONCONTACT, ELECTRODE-FREE CAPACITANCE-VOLTAGE MEASUREMENT BASED ON GENERAL-THEORY OF METAL-OXIDE-SEMICONDUCTOR (MOS) STRUCTURE

In this paper, we discussed a novel approach to semiconductor surface inspection, which is analysis using the C-V curve measured in a noncontact method by the metal-air-semiconductor (M AIS) technique. A new gap sensing method using the so-called Goos-Haenchen effect was developed to achieve the noncontact C-V measurement. The M AIS technique exhibited comparable sensitivity and repeatability to those of conventional C-V measurement, and hence, good reproducibility and resolution for quantifying the electrically active impurity on the order of 1 x 10(9)/cm2, which is better than most spectrometric techniques, such as secondary ion mass spectroscopy (SIMS), electron spectroscopy for chemical analysis (ESCA) and Auger electron spectrocopy (AES) which are time-consuming and destructive. This measurement without preparation of any electrical contact metal electrode suggested, for the first time, the possibility of measuring an intrinsic characteristic of the semiconductor surface, using the examples of a concrete examination.