500 GHZ GAAS MMIC SAMPLING WAFER PROBE

被引：25

作者：

SHAKOURI, MS ^{[1
]}

BLACK, A ^{[1
]}

AULD, BA ^{[1
]}

BLOOM, DM ^{[1
]}

机构：

[1] STANFORD UNIV,EDWARD L GINZTON LAB,STANFORD,CA 94305

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 06期

关键词：

MICROWAVE MEASUREMENT; MICROWAVE INTEGRATED CIRCUITS;

D O I：

10.1049/el:19930372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 500 GHz bandwidth GaAs MMIC sampling wafer probe is reported which incorporates a mechanical flexure and a micromachined GaAs IC for time domain on-wafer measurements. The GaAs IC incorporates a novel high speed pulse sharpener and a two-diode sampling bridge with a micromachined GaAs tip.

引用

页码：557 / 558

页数：2

共 7 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].