THE INCORPORATION OF OXYGEN INTO INALAS, THE ROLE OF TRIMETHYLINDIUM (TMI)

被引：9

作者：

ROBERTS, JS ^{[1
]}

BUTTON, CC ^{[1
]}

CHEW, A ^{[1
]}

机构：

[1] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 135卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90764-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Secondary ion masss spectrometry (SIMS) has been used to assess the oxygen concentration in AlAs and InAlAs grown by low pressure metalorganic vapour phase epitaxy (MOVPE). A significantly higher oxygen signal from InAlAs has been tentatively attributed to volatile oxide residues of trimethylindium (TMI).

引用

页码：365 / 366

页数：2