THE EFFECTS OF OXYGEN ON THE ELECTRONIC AND OPTICAL-PROPERTIES OF ALINAS LAYERS LATTICE-MATCHED TO INP SUBSTRATES GROWN BY ATMOSPHERIC-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：14

作者：

KAMADA, M

ISHIKAWA, H

MIWA, S

STILLMAN, GE

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240, 174, Fujitsuka-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.352866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlInAs layers lattice-matched to InP substrates were grown by atmospheric-pressure metal-organic chemical vapor deposition. The residual oxygen concentration determined by secondary ion mass spectrometry ranged from 3 X 10(16) to 3 X 10(19) CM-3 , and was high when the growth temperature was low or the V/III ratio was low. The oxygen concentration and the residual carrier concentration showed the same dependence on the V/III ratio in the high V/III ratio region. This suggests that oxygen is the origin of the residual carrier concentration. Strong correlations between the oxygen concentration and the photoluminescence intensity and reverse current through Schottky diodes suggest that oxygen creates generation-recombination centers in AlInAs layers.

引用

收藏

页码：4004 / 4008

页数：5

相关论文

共 20 条

[1] PHOTOLUMINESCENCE KILLER CENTER IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

AKIMOTO, K ;

KAMADA, M ;

TAIRA, K ;

ARAI, M ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2833-2836

[2]

ALT HC, 1992, MATER SCI FORUM, V83, P369, DOI 10.4028/www.scientific.net/MSF.83-87.369

[3] EFFECT OF GROWTH TEMPERATURE ON THE OPTICAL, ELECTRICAL AND CRYSTALLOGRAPHIC PROPERTIES OF EPITAXIAL INDIUM GALLIUM-ARSENIDE GROWN BY MOCVD IN AN ATMOSPHERIC-PRESSURE REACTOR [J].

BASS, SJ ;

BARNETT, SJ ;

BROWN, GT ;

CHEW, NG ;

CULLIS, AG ;

PITT, AD ;

SKOLNICK, MS .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :378-385

[4] GROWTH OF HIGH-QUALITY ALINAS BY LOW-PRESSURE ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION FOR HIGH-SPEED AND OPTOELECTRONIC DEVICE APPLICATIONS [J].

BHAT, R ;

KOZA, MA ;

KASH, K ;

ALLEN, SJ ;

HONG, WP ;

SCHWARZ, SA ;

CHANG, GK ;

LIN, P .

JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) :441-448

[5] DETERMINATION OF THE BAND DISCONTINUITY OF MOCVD GROWN IN1-XGAXAS/IN1-YALYAS HETEROSTRUCTURES WITH OPTICAL AND STRUCTURAL METHODS [J].

BOHRER, J ;

GRUNDMANN, M ;

LIENERT, U ;

BIMBERG, D ;

ISHIKAWA, H ;

KAMADA, M ;

WATANABE, N .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :555-560

[6]

BUCHALI F, 1992, INDIUM PHOSPHIDE REL, V4, P534

[7] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J].

CASEY, HC ;

CHO, AY ;

LANG, DV ;

NICOLLIAN, EH ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3484-3491

[8] W-BAND LOW-NOISE INALAS INGAAS LATTICE-MATCHED HEMTS [J].

CHAO, PC ;

TESSMER, AJ ;

DUH, KHG ;

HO, P ;

KAO, MY ;

SMITH, PM ;

BALLINGALL, JM ;

LIU, SMJ ;

JABRA, AA .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) :59-62

[9] IMPROVEMENTS IN THE STRUCTURAL QUALITY OF AL0.48IN0.52AS GROWN BY LOW-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY [J].

DAVIES, JI ;

HODSON, PD ;

MARSHALL, AC ;

SCOTT, MD ;

GRIFFITHS, RJM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (03) :223-226

[10] GATE-LENGTH DEPENDENCE OF DC AND MICROWAVE PROPERTIES OF SUBMICROMETER IN0.53GA0.47AS HIGFETS [J].

FEUER, MD ;

TENNANT, DM ;

KUO, JM ;

SHUNK, SC ;

TELL, B ;

CHANG, TY .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :70-72