DETERMINATION OF THE BAND DISCONTINUITY OF MOCVD GROWN IN1-XGAXAS/IN1-YALYAS HETEROSTRUCTURES WITH OPTICAL AND STRUCTURAL METHODS

被引:8
作者
BOHRER, J
GRUNDMANN, M
LIENERT, U
BIMBERG, D
ISHIKAWA, H
KAMADA, M
WATANABE, N
机构
[1] SONY CORP,HODOGAYA KU,YOKOHAMA,KANAGAWA 240,JAPAN
[2] KANAGAWA UNIV,YOKOHAMA 221,JAPAN
关键词
D O I
10.1016/0022-0248(91)90520-F
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The conduction band discontinuity DELTA-E(c) for In(1-x)Ga(x)As/In(1-y)Al(y)As heterostructures has been determined with larger precision than hitherto with DELTA-E(c) = (0.75 +/- 0.05)-DELTA-E(g) for compositions close to the lattice matching condition. This result, which resolves a long lasting dispute on one of the most fundamental parameters of this system, is derived on the basis of a comparative study of calorimetric absorption spectroscopy, photoluminescence, and double-crystal X-ray diffractometry on quantum wells, and predictions of bandstructure calculations including strain.
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收藏
页码:555 / 560
页数:6
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