GATE-LENGTH DEPENDENCE OF DC AND MICROWAVE PROPERTIES OF SUBMICROMETER IN0.53GA0.47AS HIGFETS

被引：14

作者：

FEUER, MD

TENNANT, DM

KUO, JM

SHUNK, SC

TELL, B

CHANG, TY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 02期

关键词：

D O I：

10.1109/55.32432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：70 / 72

页数：3

共 11 条

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[8] MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH [J].

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[9] A GAAS GATE HETEROJUNCTION FET [J].

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[10]

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