CURRENT-GAIN CUTOFF FREQUENCY COMPARISON OF INGAAS HEMTS

被引：42

作者：

HIKOSAKA, K

SASA, S

HARADA, N

KURODA, S

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

CURRENT-GAIN CUTOFF FREQUENCY PERFORMANCE - HIGH-ELECTRON-MOBILITY TRANSISTORS (HEMTS) - PSEUDOMORPHIC AND LATTICE MATCHED TRANSISTORS;

D O I：

10.1109/55.703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：241 / 243

页数：3

共 20 条

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CHAO, PC
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SMITH, PM
MISHRA, UK
DUH, KHG
HWANG, JCM
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[4] Eastman L. F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P456
[5] SEMICONDUCTOR-GATED INGAAS/INALAS HETEROSTRUCTURE TRANSISTORS (SISFETS)
FEUER, MD
CHANG, TY
SHUNK, SC
TELL, B
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 33 - 35
[6] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
FRITZ, IJ
PICRAUX, ST
DAWSON, LR
DRUMMOND, TJ
LAIDIG, WD
ANDERSON, NG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969
[7] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR
HENDERSON, T
AKSUN, MI
PENG, CK
MORKOC, H
CHAO, PC
SMITH, PM
DUH, KHG
LESTER, LF
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 649 - 651
[8] HIROSE K, 1985, I PHYS C SER, V79, P529
[9] Hueschen M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P348
[10] HUESCHEN M, 1987, IEDM, P596

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