SEMICONDUCTOR-GATED INGAAS/INALAS HETEROSTRUCTURE TRANSISTORS (SISFETS)

[1] ABE M, 1985, VLSI ELECTRONICS MIC, V11, P333

[2] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2158 - 2160

[3] DINGLE R, 1985, VLSI ELECTRONICS MIC, V11, P215

[4] INGAAS/INALAS HETEROSTRUCTURE DIODES FOR APPLICATION TO HIGH-SPEED SEMICONDUCTOR-GATED FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1640 - 1643

[5] Kato N., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P90

[6] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1984, 20 (11) : 462 - 463

[7] A GAAS GATE HETEROJUNCTION FET [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 379 - 381

[8] WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

[1] ABE M, 1985, VLSI ELECTRONICS MIC, V11, P333

[2] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2158 - 2160

[3] DINGLE R, 1985, VLSI ELECTRONICS MIC, V11, P215

[4] INGAAS/INALAS HETEROSTRUCTURE DIODES FOR APPLICATION TO HIGH-SPEED SEMICONDUCTOR-GATED FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1640 - 1643

[5] Kato N., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P90

[6] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J]. ELECTRONICS LETTERS, 1984, 20 (11) : 462 - 463

[7] A GAAS GATE HETEROJUNCTION FET [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 379 - 381

[8] WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459