INGAAS/INALAS HETEROSTRUCTURE DIODES FOR APPLICATION TO HIGH-SPEED SEMICONDUCTOR-GATED FETS

被引：7

作者：

FEUER, MD

CHANG, TY

SHUNK, SC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1640 / 1643

页数：4

共 10 条

[1] Cirillo N. C. Jr., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P317
[2] TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS
DELAGEBEAUDEUF, D
DELESCLUSE, P
ETIENNE, P
MASSIES, J
LAVIRON, M
CHAPLART, J
LINH, T
[J]. ELECTRONICS LETTERS, 1982, 18 (02) : 85 - 87
[3] DINGLE R, 1985, VLSI ELECTRONICS MIC, V11, P215
[4] ENHANCEMENT-MODE METAL/(AL, GA)AS/GAAS BURIED-INTERFACE FIELD-EFFECT TRANSISTOR (BIFET)
DRUMMOND, TJ
KOPP, W
ARNOLD, D
FISCHER, R
MORKOC, H
ERICKSON, LP
PALMBERG, PW
[J]. ELECTRONICS LETTERS, 1983, 19 (23) : 986 - 987
[5] ON THE LOW-TEMPERATURE DEGRADATION OF (ALGA)AS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS
KASTALSKY, A
KIEHL, RA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (03) : 414 - 423
[6] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR
MATSUMOTO, K
OGURA, M
WADA, T
HASHIZUME, N
YAO, T
HAYASHI, Y
[J]. ELECTRONICS LETTERS, 1984, 20 (11) : 462 - 463
[7] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM
MIZUTA, M
TACHIKAWA, M
KUKIMOTO, H
MINOMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L143 - L146
[8] OE K, UNPUB SURFACE SCI
[9] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS
SOLOMON, PM
HICKMOTT, TW
MORKOC, H
FISCHER, R
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 821 - 823
[10] A GAAS GATE HETEROJUNCTION FET
SOLOMON, PM
KNOEDLER, CM
WRIGHT, SL
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) : 379 - 381

← 1 →