W/WSI GATE SELF-ALIGNED HIFETS (HETEROINTERFACE FETS) USING AN ALINAS/GAINAS HETEROSTRUCTURE GROWN BY MOCVD

被引：7

作者：

KAMADA, M

ISHIKAWA, H

KANEKO, K

WATANABE, N

机构：

[1] Sony Corp Research Cent, Yokohama, Jpn, Sony Corp Research Cent, Yokohama, Jpn

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 05期

关键词：

D O I：

10.1049/el:19880181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：271 / 272

页数：2

共 7 条

[1]

Cirillo N. C. Jr., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P317

[2] INGAAS/INALAS HETEROSTRUCTURE DIODES FOR APPLICATION TO HIGH-SPEED SEMICONDUCTOR-GATED FETS [J].

FEUER, MD ;

CHANG, TY ;

SHUNK, SC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1640-1643

[3] HIGH-TRANSCONDUCTANCE ALLNAS/GAINAS HIFETS GROWN BY MOCVD [J].

KAMADA, M ;

KOBAYASHI, T ;

ISHIKAWA, H ;

MORI, Y ;

KANEKO, K ;

KOJIMA, C .

ELECTRONICS LETTERS, 1987, 23 (06) :297-298

[4] OHMIC CONTACTS ON SELECTIVELY DOPED ALINAS/GAINAS HETEROSTRUCTURES USING NI, AUGE AND AU [J].

KAMADA, M ;

ISHIKAWA, H ;

MORI, Y ;

KOJIMA, C .

SOLID-STATE ELECTRONICS, 1987, 30 (12) :1345-1349

[5]

KAMADA M, 1987, I PHYS C SER, V83, P575

[6] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J].

MATSUMOTO, K ;

OGURA, M ;

WADA, T ;

HASHIZUME, N ;

YAO, T ;

HAYASHI, Y .

ELECTRONICS LETTERS, 1984, 20 (11) :462-463

[7] A GAAS GATE HETEROJUNCTION FET [J].

SOLOMON, PM ;

KNOEDLER, CM ;

WRIGHT, SL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :379-381

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