MICROWAVE PERFORMANCE OF INGAAS INALAS INP SISFETS

被引：8

作者：

FEUER, MD

KUO, JM

SHUNK, SC

BEHRINGER, RE

CHANG, TY

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 04期

关键词：

MICROWAVE PERFORMANCE - MICROWAVE SCATTERING PARAMETERS - SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR FET (SISFET);

D O I：

10.1109/55.676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：162 / 164

页数：3

共 13 条

[1] 2-LAYER MODEL FOR SOURCE RESISTANCE IN SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 7 - 11
[2] SEMICONDUCTOR-GATED INGAAS/INALAS HETEROSTRUCTURE TRANSISTORS (SISFETS)
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[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 33 - 35
[3] INGAAS/INALAS HETEROSTRUCTURE DIODES FOR APPLICATION TO HIGH-SPEED SEMICONDUCTOR-GATED FETS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1640 - 1643
[4] CHARACTERIZATION OF HETEROSTRUCTURE COMPLEMENTARY MISFET CIRCUITS EMPLOYING THE NEW GATE CURRENT MODEL
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (09) : 1889 - 1896
[5] MISHRA UK, 1987 DEV RES C
[6] A MONOLITHICALLY INTEGRATED ALGAAS/GAAS P-I-N/FET PHOTORECEIVER BY MOCVD
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[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 375 - 376
[7] ELECTRICAL CHARACTERIZATION AND ALLOY SCATTERING MEASUREMENTS OF LPE GAXIN1-XAS-INP FOR HIGH-FREQUENCY DEVICE APPLICATIONS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 64 - 68
[8] MICROWAVE CHARACTERIZATION OF 1-MU-M-GATE AL0.48IN0.52AS/GA0.47IN0.53AS/INP MODFETS
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TASKER, PJ
ITOH, T
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WICKS, GW
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1987, 23 (01) : 53 - 55
[9] MICROWAVE PERFORMANCE OF INALAS/INGAAS/INP MODFETS
PENG, CK
AKSUN, MI
KETTERSON, AA
MORKOC, H
GLEASON, KR
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 24 - 26
[10] DC AND MICROWAVE CHARACTERISTICS OF AN IN0.53GA0.47AS/IN0.52AL0.48AS MODULATION-DOPED QUASI-MISFET
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BHATTACHARYA, PK
GLEASON, KR
[J]. ELECTRONICS LETTERS, 1987, 23 (06) : 259 - 260

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