CHARACTERIZATION OF HETEROSTRUCTURE COMPLEMENTARY MISFET CIRCUITS EMPLOYING THE NEW GATE CURRENT MODEL

[1] THRESHOLD VOLTAGE BEHAVIOR FOR WSI/ALXGA1-XAS/GAAS MIS-LIKE HETEROSTRUCTURE FET [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08): : L623 - L625

[2] ARAI K, 1985, INT PHYS C SERIES, V79, P631

[3] CIRILLO NC, 1985, DEC IEDM, P317

[4] DRUMMOND TJ, 1985, ELECTRON LETT, V19, P986

[5] Fujita S., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE69, P288

[6] THRESHOLD-VOLTAGE STABILITY OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FETS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (07): : L554 - L556

[7] PARA-CHANNEL ALGAAS-GAAS HETEROSTRUCTURE FETS EMPLOYING TWO-DIMENSIONAL HOLE GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L868 - L870

[8] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L150 - L152

[9] COMPLEMENTARY P-MODFET AND N-HB MESFET (AL,GA)AS TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 521 - 523

[10] BARRIER HEIGHT IN INDIRECT BANDGAP ALGAAS/GAAS HETERO-JUNCTION DETERMINED WITH N-SEMICONDUCTOR INSULATOR SEMICONDUCTOR DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (07): : L557 - L559

[1] THRESHOLD VOLTAGE BEHAVIOR FOR WSI/ALXGA1-XAS/GAAS MIS-LIKE HETEROSTRUCTURE FET [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08): : L623 - L625

[2] ARAI K, 1985, INT PHYS C SERIES, V79, P631

[3] CIRILLO NC, 1985, DEC IEDM, P317

[4] DRUMMOND TJ, 1985, ELECTRON LETT, V19, P986

[5] Fujita S., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE69, P288

[6] THRESHOLD-VOLTAGE STABILITY OF P-CHANNEL ALGAAS/GAAS MIS-LIKE HETEROSTRUCTURE FETS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (07): : L554 - L556

[7] PARA-CHANNEL ALGAAS-GAAS HETEROSTRUCTURE FETS EMPLOYING TWO-DIMENSIONAL HOLE GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (11): : L868 - L870

[8] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L150 - L152

[9] COMPLEMENTARY P-MODFET AND N-HB MESFET (AL,GA)AS TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 521 - 523

[10] BARRIER HEIGHT IN INDIRECT BANDGAP ALGAAS/GAAS HETERO-JUNCTION DETERMINED WITH N-SEMICONDUCTOR INSULATOR SEMICONDUCTOR DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (07): : L557 - L559