P-N HETEROJUNCTIONS

[11] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[12] PERLMAN SS, 1963, THESIS CARNEGIE I TE

[13] PRICE PJ, 1962, INT C PHYSICS SEMICO

[14] VAPOR-DEPOSITED SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 995 - 1006

[15] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[16] SHOCKLEY W, 1949, BELL SYST TECH J, V28, P335

[17] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J]. PHYSICAL REVIEW, 1962, 126 (06): : 2002 - &

[11] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[12] PERLMAN SS, 1963, THESIS CARNEGIE I TE

[13] PRICE PJ, 1962, INT C PHYSICS SEMICO

[14] VAPOR-DEPOSITED SINGLE-CRYSTAL GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 995 - 1006

[15] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[16] SHOCKLEY W, 1949, BELL SYST TECH J, V28, P335

[17] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J]. PHYSICAL REVIEW, 1962, 126 (06): : 2002 - &