SCALING OF GAMMA-DOSE RATE UPSET THRESHOLD IN HIGH-DENSITY MEMORIES

被引：8

作者：

VAIL, PJ ^{[1
]}

BURKE, EA ^{[1
]}

RAYMOND, JP ^{[1
]}

机构：

[1] MISSION RES CORP,SAN DIEGO,CA 92123

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4240 / 4245

页数：6

共 8 条

[1]

BURKE EA, 1981, IEEE T NUCL SCI, V28, P4068

[2]

BURY KV, 1975, STATISTICAL MODELS A, P367

[3] ALPHA-PARTICLE-INDUCED SOFT ERRORS IN DYNAMIC MEMORIES [J].

MAY, TC ;

WOODS, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :2-9

[4] UPSET PHENOMENA INDUCED BY ENERGETIC PROTONS AND ELECTRONS [J].

MCNULTY, PJ ;

FARRELL, GE ;

WYATT, RC ;

ROTHWELL, PL ;

FILZ, RC ;

BRADFORD, JN .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1516-1522

[5]

MEAD C, 1980, INTRO VLSI SYSTEMS, P33

[6] CALCULATION OF COSMIC-RAY INDUCED SOFT UPSETS AND SCALING IN VLSI DEVICES [J].

PETERSEN, EL ;

SHAPIRO, P ;

ADAMS, JH ;

BURKE, EA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2055-2063

[7] TRANSIENT IONIZING RADIATION EFFECTS IN MOS/LSI [J].

RAYMOND, JP ;

POCOCK, DN .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :288-&

[8] RADIATION RESPONSE OF ADVANCED DYNAMIC RANDOM-ACCESS MEMORIES (DRAMS) [J].

WITTELES, AA ;

VOLMERANGE, H .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1665-1669

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